C. Busseret: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Parameters extraction of hafnium based gate oxide capacitors

T. Nguyen, C. Busseret, L. Militaru, A. Poncet, D. Aimé, N. Baboux, C. Plossu

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 487 KB

english, 2007

2

Peculiarities of electron tunnel injection to the drain of EEPROMs

N. Baboux, C. Busseret, C. Plossu, P. Boivin

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 139 KB

english, 2007

3

Growth by Low Pressure Chemical Vapor Deposition of Silicon Quantum Dots on Insulator for Nanoelectronics Devices

Baron, T., Martin, F., Mur, P., Wyon, C., Dupuy, M., Busseret, C., Souifi, A., Guillot, G.

Journal:

MRS Proceedings

Year:

1999

Language:

english

File:

PDF, 2.22 MB

english, 1999

4

Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques † 

C. Busseret, A. Souifi, T. Baron, G. Guillot, F. Martin, M.N. Semeria, J. Gautier

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 198 KB

english, 2000

5

Granular description of charging kinetics in silicon nanocrystals memories

C. Busseret, S. Ferraton, L. Montès, J. Zimmermann

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 247 KB

english, 2006

6

Electronic properties of Ge nanocrystals for non volatile memory applications

M. Kanoun, C. Busseret, A. Poncet, A. Souifi, T. Baron, E. Gautier

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 225 KB

english, 2006

7

Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices

T. Baron, F. Martin, P. Mur, C. Wyon, M. Dupuy, C. Busseret, A. Souifi, G. Guillot

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 1.01 MB

english, 2000

8

Study of trap centres in silicon nanocrystal memories

A. Souifi, P. Brounkov, S. Bernardini, C. Busseret, L. Militaru, G. Guillot, T. Baron

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 485 KB

english, 2003

9

Electronic properties of silicon nanocrystallites obtained by SiOx (x

C Busseret, A Souifi, T Baron, S Monfray, N Buffet, E Gautier, M.N Semeria

Journal:

Materials Science and Engineering: C

Year:

2002

Language:

english

File:

PDF, 325 KB

english, 2002

10

Optical properties of silicon nanocrystal LEDs

J. De La Torre, A. Souifi, A. Poncet, C. Busseret, M. Lemiti, G. Bremond, G. Guillot, O. Gonzalez, B. Garrido, J.R. Morante, C. Bonafos

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2003

Language:

english

File:

PDF, 308 KB

english, 2003

11

Optical and electrical transport mechanisms in Si-nanocrystal-based LEDs

J. De la Torre, A. Souifi, M. Lemiti, A. Poncet, C. Busseret, G. Guillot, G. Bremond, O. Gonzalez, B. Garrido, J.R. Morante

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2003

Language:

english

File:

PDF, 190 KB

english, 2003

12

On the saturation mechanism in the Ge nanocrystals-based non-volatile memory

M. Kanoun, C. Busseret, T. Baron, A. Souifi

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 198 KB

english, 2006

13

Nucleation control of CVD growth silicon nanocrystals for quantum devices

T. Baron, F. Mazen, C. Busseret, A. Souifi, P. Mur, F. Fournel, M.N. Séméria, H. Moriceau, B. Aspard, P. Gentile, N. Magnea

Journal:

Microelectronic Engineering

Year:

2002

Language:

english

File:

PDF, 1019 KB

english, 2002

14

A three charge-states model for silicon nanocrystals nonvolatile memories

Busseret, C., Ferraton, S., Montes, L., Zimmermann, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 283 KB

english, 2006

15

Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks

Palestri, P., Barin, N., Brunel, D., Busseret, C., Campera, A., Childs, P. A., Driussi, F., Fiegna, C., Fiori, G., Gusmeroli, R., Iannaccone, G., Karner, M., Kosina, H., Lacaita, A. L., Langer, E., Ma

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 274 KB

english, 2007

16

Quantitative study of charge trapping in SiO2 during bipolar Fowler–Nordheim injection

C. Busseret, N. Baboux, C. Plossu, S. Burignat, P. Boivin

Journal:

Journal of Non-Crystalline Solids

Year:

2003

Language:

english

File:

PDF, 177 KB

english, 2003

17

Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cells

N. Baboux, C. Busseret, C. Plossu, S. Burignat, B. Balland, P. Boivin

Journal:

Journal of Non-Crystalline Solids

Year:

2003

Language:

english

File:

PDF, 157 KB

english, 2003

18

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Cross validation of quantum simulations and optical measurements in single electron memories with silicon nano-crystallites

Poncet, A., Busseret, C., Souifi, A.

Year:

2002

Language:

english

File:

PDF, 220 KB

english, 2002

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски